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IL4216 700 V IL4217 800 V IL4218
600 V TRIAC DRIVER OPTOCOUPLER
FEATURES * High Input Sensitivity IFT=1.3 mA * 600/700/800 V Blocklng Voltage * 300 mA On-State Current * High Static dv/dt 10,000 V/sec., typical * Inverse Parallel SCRs Provide Commutating dv/dt >10 KV/sec * Very Low Leakage <10 A * Isolation Test Voltage from Double Molded Package 5300 VACRMS * Package, 6-Pln DIP * Underwriters Lab File #E52744 DESCRIPTION The IL421x consists of an AlGaAs IRLED optically coupled to a pair of photosensitive non-zero crossing SCR chips and are connected inversely parallel to form a TRIAC. These three semiconductors are assembled in a six pin 0.3 inch dual in-line package, using high insulation double molded, over/under leadframe construction. High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of less than 1.3 mA (DC). The IL421x uses two discrete SCRs resulting in a commutating dv/dt of greater than 10KV/s. The use of a proprietary dv/dt clamp results in a static dv/dt of greater than 10KV/s. This clamp circuit has a MOSFET that is enhanced when high dv/dt spikes occur between MT1 and MT2 of the TRIAC. The FET clamps the base of the phototransistor when conducting, disabling the internal SCR predriver. The blocking voltage of up to 800 V permits control of off-line voltages up to 240 VAC, with a safety factor of more than two, and is sufficient for as much as 380 VAC. Current handling capability is up to 300 mA RMS, continuous at 25C. The IL421x isolates low-voltage logic from 120, 240, and 380 VAC lines to control resistive inductive, or capacitive loads including motors solenoids, high current thyristors or TRIAC and relays. Applications include solid-state relays, industrial controls, office equipment, and consumer appliances.
4 typ. .018 (0.45) .022 (0.55) Dimensions in inches (mm) Pin One ID. 3 .248 (6.30) .256 (6.50) 4 5 6 2 1 LED 1 Anode LED 2 Cathode NC 3 6 Triac 2 Anode Substrate 5 do not connect Triac 4 Anode 1
.335 (8.50) .343 (8.70) .039 (1.00) min. .300 (7.62) typ. .130 (3.30) .150 (3.81) 18 typ. .020 (.051) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. .010 (.25) .014 (.35) .300 (7.62) .347 (8.82) .110 (2.79) .150 (3.81)
Maximum Ratings Emitter Reverse Voltage ...................................................................................6 V Forward Current ..............................................................................60 mA Surge Current ....................................................................................2.5 A Power Dissipation.........................................................................100 mW Derate Linearly from 25C ......................................................1.33 mW/C Thermal Resistance....................................................................750 C/W Detector Peak Off-State Voltage IL4216...........................................................................................600 V IL4217...........................................................................................700 V IL4218...........................................................................................800 V RMS On-State Current...................................................................300 mA Single Cycle Surge...............................................................................3 A Total Power Dissipation ................................................................500 mW Derate Linearly from 25C ........................................................6.6 mW/C Thermal Resistance.....................................................................150C/W Package Isolation Test Voltage........................................................... 5300 VACRMS Storage Temperature......................................................-55C to +150C Operating Temperature ..................................................-55C to +100C Lead Soldering Temperature................................................ 260C/5 sec. Isolation Resistance VIO=500 V, TA=25C ................................................................. 1012 VIO=500 V, TA=100C ............................................................... 1011
5-1
Characteristics (TA=25C)
Parameter Emitter Forward Voltage Breakdown Voltage Reverse Current Capacitance Thermal Resistance, Junction to Lead Output Detector Repetitive Peak Off-State Voltage IL4216 IL4217 IL4218 Off-State Voltage IL4216 IL4217 IL4218 Off-State Current Reverse Current On-State Voltage On-State Current Surge (Non-Repetitive) On-State Current Holding Current Latching Current LED Trigger Current Turn-On Time Turn-Off Time Critical State of Rise: Off-State Voltage Commutating Voltage Off-State Current Thermal Resistance, Junction to Lead Package Critical Rate of Rise of Coupled Input-Output Voltage Common Mode Coupling Capacitor CCM Package Capacitance CIO 0.01 0.8 pF pF f=1 MHz, VIO=0 V dv(IO)/dt 5000 V/s IT=0 A, VRM=VDM=300 VAC VDRM VDRM VDRM VD(RMS) VD(RMS) VD(RMS) ID(RMS) IR(RMS) VTM ITM ITSM IH IL IFT tON tOFF dv(MT)/dt dv(COM)/dt di/dt RTHJL 10,000 10,000 2000 100 150 65 5 0.7 35 50 2000 1.3 600 700 800 424 484 565 650 750 850 460 536 613 10 10 1.7 100 100 3 300 3 200 V V V V V V A A V mA A A mA mA s s V/s V/s V/s V/s A/ms IDRM=100 A IDRM=100 A IDRM=100 A ID(RMS)=70 A ID(RMS)=70 A ID(RMS)=70 A VD=600 V, TA=100C VR=600 V, TA=100C IT=300 mA PF=1.0, VT(RMS)=1.7 V f=50 Hz VT=3 V VT=2.2 V VAK=5 V VRM=VDM=424 VAC PF=1.0, IT=300 mA VRM, VDM=400 VAC, TA=25C VRM, VDM=400 VAC, TA=25C VRM, VDM=400 VAC, TA=25C VRM, VDM=400 VAC, TA=25C IT=300 mA VF VBR IR CO RTHJL 6 1.3 30 0.1 40 750 10 1.5 V V A pF IF=20 mA IR=10 mA VR=6 V VF=o V, f=1 MHz Symbol Min. Typ. Max. Unit Condition
C/W
C/W
Figure 1. LED forward current vs. forward voltage
Figure 2. Forward voltage versus forward current
IL4216/4217/4218
5-2
Figure 3. Peak LED current vs. duty factor, Tau
Power Factor Considerations A snubber isn't needed to eliminate false operation of the TRIAC driver because of the IL411's high static and commutating dv/dt with loads between 1 and 0.8 power factors. When inductive loads with power factors less than 0.8 are being driven, include a RC snubber or a single capacitor directly across the device to damp the peak commutating dv/dt spike. Normally a commutating dv/dt causes a turning-off device to stay on due to the stored energy remaining in the turning-off device. But in the case of a zero voltage crossing optotriac, the commutating dv/dt spikes can inhibit one half of the TRIAC from turning on. If the spike potential exceeds the inhibit voltage of the zero cross detection circuit, half of the TRIAC will be heldoff and not turn-on. This hold-off condition can be eliminated by using a snubber or capacitor placed directly across the optotriac as shown in Figure 7. Note that the value of the capacitor increases as a function of the load current. The hold-off condition also can be eliminated by providing a higher level of LED drive current. The higher LED drive provides a larger photocurrent which causer. the phototransistor to turn-on before the commutating spike has activated the zero cross network. Figure 8 shows the relationship of the LED drive for power factors of less than 1.0. The curve shows that if a device requires 1.5 mA for a resistive load, then 1.8 times (2.7 mA) that amount would be required to control an inductive load whose power factor is less than 0.3. Figure 7. Shunt capacitance versus load current versus power factor
Figure 4. Maximum LED power dissipation
Figure 5. On-state terminal voltage vs. terminal current
Figure 6. Maximum output power dissipation
Figure 8. Normalized LED trigger current versus power factor
IL4216/4217/4218
5-3

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